inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc p-channel mosfet transistor 2SJ380 description low drain-source on resistance high forward transfer admittance low leakage current enhancement-mode applications high speed switching application switching regulator ,dc-dc converter and motor drive application absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) -100 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=37 -12 a p tot total dissipation@tc=25 35 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.57 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc p-channel mosfet transistor 2SJ380 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = -10ma -100 v v gs(th) gate threshold voltage v ds = v gs ; i d = -1ma -0.8 -2.0 v r ds(on) drain-source on-stage resistance v gs = -10v; i d = -6a 0.21 i gss gate source leakage current v gs = -16v;v ds = 0 -10 ua i dss zero gate voltage drain current v ds = -100v,v gs = 0 -0.1 ma v sd diode forward voltage i f =-12a;v gs = 0 -1.7 v pdf pdffactory pro www.fineprint.cn
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